RESET failure analysis of phase change memory based on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

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RESET failure analysis of phase change memory based on Ge2Sb2Te5

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Ge17Te83-xTlx (x = 2, 3, 6, 8, 10) glasses have been prepared by melt quenching method and their amorphous nature was confirmed by XRD spectra. I-V characteristics and repeatability of electrical switching were investigated for all the glasses in order to find out their suitability for phase change memory applications. A comparison has been given with Ge2Sb2Te5 the most commonly used material f...

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ژورنال

عنوان ژورنال: IEICE Electronics Express

سال: 2017

ISSN: 1349-2543

DOI: 10.1587/elex.14.20170673